tse.mi-conciu.cko'i ^pioducti, 20 stern ave. springfield, new jersey 07081 u.s.a. npn silicon high-voltage power transistors . . . designed for use in line-operated equipment requiring high ff. ? high dc current gain hpe = 40-160 @ ic = 20 madc ? current gain bandwidth product ? ft = 15 mhz (min) @ ig = 10 madc ? low output capacitance = 10pf(max)@f= 1.0mhz maximum ratings MJE3439 thermal characteristics 0.3 ampere power transistor npn silicon 350 volts 15 watts rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous base current total power dissipation @ tc = 25c derate above 25c operating and storage junction temperature range symbol vceo vcb veb ic . ib pd tj. tstg value 350 450 5.0 0.3 150 15 0.12 -65 to +150 unit vdc vdc vdc adc madc watts w/c c to-225aa type characteristic thermal resistance, junction to case symbol 9jc max 8.33 unit c/w 10 14 10 8.0 6.0 2.0 n h^_^^_ ^s \ \ \ 20 40 60 80 100 120 140 160 tc, case temperature (c) figure 1. power-temperature derating curve nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-concluctors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. oiinllfv
MJE3439 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol win max unit off characteristics collector-emitter sustaining voltage (1c = 5.0 madc, ib = 0) collector cutoff current (vce = soo vac, ib = o) collector cutoff current (vce = 450 vdc, veb(0ff) = 1 .5 vdc) collector cutoff current |
